IGBT Modules
Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
MG06200S-BN4MM
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Littelfuse Inc. | IGBT 600V 300A 600W PKG S | 49 | $94.24 | |
MG12150S-BN2MM
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Littelfuse Inc. | IGBT 1200V 200A 625W PKG S | 89 | $90.53 | |
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Vishay / Semiconductor - Diodes Division | IGBT 600V 114A 658W MTP | 189 | $57.75 | |
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Microsemi Corporation | IGBT 1200V 140A 480W SOT227 | 204 | $34.13 | |
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Microsemi Corporation | IGBT 1200V 124A 379W SOT227 | 165 | $31.99 | |
IXDN55N120D1
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IXYS | IGBT 1200V 100A W/DIODE SOT-227B | 716 | $26.83 | |
FF600R12ME4BOSA1
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Infineon Technologies | IGBT MODULE VCES 600V 600A | 58 | $226.92 | |
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Infineon Technologies | IGBT MODULE 1200V 900A | 50 | $155.17 | |
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Infineon Technologies | IGBT MODULE 1200V 450A | 60 | $155.17 | |
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Infineon Technologies | IGBT MODULE 1200V 300A | 66 | $122.44 |
MG06200S-BN4MM
IXDN55N120D1
FF600R12ME4BOSA1