IGBT Modules
Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
|
|
Infineon Technologies | IGBT MODULE 600V 30A | 50 | $29.11 | |
IXGN120N60A3D1
|
IXYS | IGBT 200A 600V SOT-227B | 100 | $28.43 | |
IXDN75N120
|
IXYS | IGBT 1200V 150A SOT-227B | 49 | $25.44 | |
FS450R12KE3BOSA1
|
Infineon Technologies | IGBT MODULE 1200V 450A | 14 | $555.10 | |
FF600R12IP4BOSA1
|
Infineon Technologies | IGBT MODULE 1200V 600A | 9 | $396.14 | |
FS150R12KT4BOSA1
|
Infineon Technologies | IGBT MODULE 1200V 150A | 9 | $179.40 | |
FF450R12ME4BOSA1
|
Infineon Technologies | IGBT MODULE 1200V 450A | 8 | $169.17 | |
DDB6U84N16RRBOSA1
|
Infineon Technologies | IGBT MODULE 1600V 60A | 59 | $75.15 | |
FF50R12RT4HOSA1
|
Infineon Technologies | IGBT MODULE 1200V 50A | 56 | $45.90 | |
|
|
Vishay / Semiconductor - Diodes Division | IGBT SIP MODULE 600V 13A IMS-2 | 69 | $45.15 |
IXGN120N60A3D1
IXDN75N120
FS450R12KE3BOSA1
FF600R12IP4BOSA1
FS150R12KT4BOSA1
FF450R12ME4BOSA1
DDB6U84N16RRBOSA1
FF50R12RT4HOSA1