IGBT Modules
Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
FS100R17N3E4BOSA1
|
Infineon Technologies | IGBT MODULE 1700V 100A | 0 | $163.00 | |
FZ800R12KE3HOSA1
|
Infineon Technologies | IGBT MODULE 1200V 800A | 0 | $155.13 | |
|
|
Microsemi Corporation | IGBT 1200V 123A 570W SOT227 | 2 | $50.81 | |
FS35R12W1T4BOMA1
|
Infineon Technologies | IGBT MODULE 1200V 35A | 0 | $38.32 | |
APT75GT120JRDQ3
|
Microsemi Corporation | IGBT 1200V 97A 480W SOT227 | 0 | $38.32 | |
IXYN80N90C3H1
|
IXYS | IGBT 900V 115A 500W C3 SOT-227 | 5 | $33.30 | |
APT75GT120JU2
|
Microsemi Corporation | IGBT 1200V 100A 416W SOT227 | 3 | $30.75 | |
FF600R12IE4BOSA1
|
Infineon Technologies | IGBT MODULE 1200V 600A | 0 | $396.14 | |
IXGN200N60B3
|
IXYS | IGBT 300A 600V SOT-227B | 4 | $32.58 | |
FF900R12IP4BOSA2
|
Infineon Technologies | IGBT MODULE 1200V 900A | 1 | $487.08 |
FS100R17N3E4BOSA1
APT75GT120JRDQ3
IXYN80N90C3H1
APT75GT120JU2
FF600R12IE4BOSA1
IXGN200N60B3
FF900R12IP4BOSA2