IGBT Modules
Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
IFS200V12PT4BOSA1
|
Infineon Technologies | MODULE IPM MIPAQ-3 | 0 | $482.23 | |
|
FF650R17IE4BOSA1
|
Infineon Technologies | IGBT MODULE VCES 1700V 650A | 0 | $465.43 | |
|
FS225R17KE3BOSA1
|
Infineon Technologies | MOD IGBT MED PWR ECONOPP-1 | 0 | $455.18 | |
|
DF900R12IP4DBOSA1
|
Infineon Technologies | PRIMPACK IGBT MOD VCE 1200V 900A | 0 | $454.83 | |
|
FD900R12IP4DBOSA1
|
Infineon Technologies | IGBT MODULE VCES 1200V 900A | 0 | $454.83 | |
|
VS-GB400AH120N
|
Vishay / Semiconductor - Diodes Division | IGBT 1200V 650A 2500W INT-A-PAK | 0 | $452.02 | |
|
FS225R17KE4BOSA1
|
Infineon Technologies | MOD IGBT MED PWR ECONOPP-1 | 0 | $449.19 | |
|
VS-GT400TH60N
|
Vishay / Semiconductor - Diodes Division | IGBT 600V 530A 1600W DIAP | 0 | $448.52 | |
|
DF600R12IP4DVBOSA1
|
Infineon Technologies | IGBT MODULE VCES 1200V 600A | 0 | $443.45 | |
|
FF600R12IP4VBOSA1
|
Infineon Technologies | IGBT MODULE VCES 600V 600A | 0 | $435.96 |