IGBT Modules
Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
FZ1200R12HP4HOSA2
|
Infineon Technologies | MODULE IGBT IHMB130-2 | 0 | $589.38 | |
|
FZ1200R12HE4HOSA2
|
Infineon Technologies | IGBT MODULE 1200V 1200A | 0 | $589.38 | |
|
FF650R17IE4DB2BOSA1
|
Infineon Technologies | IGBT MODULE VCES 1700V 650A | 0 | $580.03 | |
|
VS-GB300TH120U
|
Vishay / Semiconductor - Diodes Division | IGBT 1200V 530A 2119W INT-A-PAK | 0 | $574.84 | |
|
VS-GB300TH120N
|
Vishay / Semiconductor - Diodes Division | IGBT 1200V 500A 1645W INT-A-PAK | 0 | $574.84 | |
|
FF900R12IE4VPBOSA1
|
Infineon Technologies | MODULE IGBT PRIME2-1 | 0 | $572.64 | |
|
FF900R12IP4DBOSA2
|
Infineon Technologies | IGBT MODULE VCES 1200V 900A | 0 | $559.59 | |
|
FS300R17KE3BOSA1
|
Infineon Technologies | MOD IGBT MED PWR ECONOPP-1 | 0 | $555.11 | |
|
FF900R12IP4VBOSA1
|
Infineon Technologies | IGBT MODULE VCES 1200V 900A | 0 | $552.18 | |
|
FS450R12KE4BOSA1
|
Infineon Technologies | MOD IGBT MED PWR ECONOPP-1 | 0 | $547.11 |