IGBT Modules
Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
FS400R07A3E3BOMA1
|
Infineon Technologies | IGBT MODULES | 0 | $388.08 | |
|
FS300R12OE4PNOSA1
|
Infineon Technologies | MOD IGBT MED PWR ECONOPP-2 | 0 | $385.50 | |
|
FD650R17IE4BOSA2
|
Infineon Technologies | MODULE IGBT PRIME2-1 | 0 | $385.34 | |
|
DF650R17IE4BOSA1
|
Infineon Technologies | MOD IGBT 650A PRIME2-1 | 0 | $385.34 | |
|
DF600R12IP4DBOSA1
|
Infineon Technologies | MOD IGBT 600A PRIME2-1 | 0 | $383.41 | |
|
F575R06KE3B5BOSA1
|
Infineon Technologies | MOD IGBT LOW PWR ECONO3-2 | 0 | $381.78 | |
FS300R12OE4BOSA1
|
Infineon Technologies | IGBT MODULE 1200V 300A | 0 | $373.93 | |
|
FF450R12IE4BOSA2
|
Infineon Technologies | IGBT MODULE VCES 600V 450A | 0 | $370.48 | |
|
VS-GB150TH120N
|
Vishay / Semiconductor - Diodes Division | IGBT 1200V 300A 1008W INT-A-PAK | 0 | $358.58 | |
|
VS-GB300AH120N
|
Vishay / Semiconductor - Diodes Division | IGBT 1200V 620A 2500W INT-A-PAK | 0 | $370.19 |