IGBT Modules
Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
FF600R12IE4VBOSA1
|
Infineon Technologies | IGBT MODULE VCES 600V 600A | 0 | $435.96 | |
|
VS-GB200TH120U
|
Vishay / Semiconductor - Diodes Division | IGBT 1200V 330A 1316W INT-A-PAK | 0 | $434.51 | |
|
VS-GB200TH120N
|
Vishay / Semiconductor - Diodes Division | IGBT 1200V 360A 1136W INT-A-PAK | 0 | $434.51 | |
|
IFS150V12PT4BOSA1
|
Infineon Technologies | MODULE IPM MIPAQ-3 | 0 | $428.64 | |
|
FS400R07A3E3H6BPSA1
|
Infineon Technologies | IGBT MODULE AG-HYBRID1-4 | 0 | $419.30 | |
|
FF600R12IE4PNOSA1
|
Infineon Technologies | MOD IGBT MED PWR PRIME2-1 | 0 | $416.59 | |
|
MWI225-17E9
|
IXYS | MOD IGBT SIXPACK E+ | 0 | $408.98 | |
|
FS200R07A5E3S6BPSA1
|
Infineon Technologies | HYBRID PACK LIGHT | 0 | $404.49 | |
|
FS225R17OE4BOSA1
|
Infineon Technologies | MOD IGBT MED PWR ECONOPP-2 | 0 | $403.23 | |
|
FF450R17IE4BOSA2
|
Infineon Technologies | IGBT MODULE VCES 600V 450A | 0 | $400.48 |