RF FETs, MOSFETs
RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
MRFE8VP8600HSR5
|
NXP USA Inc. | BROADBAND RF POWER LDMOS TRANSIS | 0 | $136.53 | |
MRF8VP13350NR3
|
NXP USA Inc. | TRANS RF LDMOS 350W 50V | 0 | $135.80 | |
MRF8VP13350NR5
|
NXP USA Inc. | RF POWER LDMOS TRANSISTOR 700-13 | 0 | $135.80 | |
MRFE8VP8600HR5
|
NXP USA Inc. | TRANS RF N-CH 600W 50V | 0 | $135.62 | |
|
|
NXP USA Inc. | FET RF 65V 2.14GHZ NI-780S-2 | 0 | $134.90 | |
|
|
NXP USA Inc. | FET RF 65V 2.14GHZ NI-780S-2 | 0 | $134.90 | |
A2T23H300-24SR6
|
NXP USA Inc. | IC TRANS RF LDMOS | 0 | $0.00 | |
|
|
NXP USA Inc. | FET RF 65V 2.14GHZ NI-780S | 0 | $132.54 | |
MHE1003NR3
|
NXP USA Inc. | RF POWER LDMOS TRANSISTOR FOR CO | 0 | $130.20 | |
A2T09D400-23NR6
|
NXP USA Inc. | AIRFAST RF POWER LDMOS TRANSISTO | 0 | $125.49 |
MRFE8VP8600HSR5
MRF8VP13350NR3
A2T23H300-24SR6
MHE1003NR3