RF FETs, MOSFETs
RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
MRF8P8300HR6
|
NXP USA Inc. | FET RF 2CH 70V 820MHZ NI1230 | 0 | $142.94 | |
AFT21S230-12SR3
|
NXP USA Inc. | FET RF 65V 2.11GHZ NI780-2L2L | 0 | $142.76 | |
AFT21S230SR3
|
NXP USA Inc. | FET RF 65V 2.11GHZ NI780S-6 | 0 | $142.76 | |
A2T07H310-24SR6
|
NXP USA Inc. | FET RF 2CH 70V 880MHZ | 0 | $140.74 | |
|
A2T18H455W23NR6
|
NXP USA Inc. | AIRFAST RF POWER LDMOS TRANSISTO | 0 | $138.74 | |
|
MMRF1024HSR5
|
NXP USA Inc. | FET RF 2CH 65V 2.5GHZ NI-1230-4 | 0 | $138.14 | |
MRFE6VP61K25GNR6
|
NXP USA Inc. | TRANS RF LDMOS 1250W 50V | 0 | $137.60 | |
|
MRF8VP13350GNR3
|
NXP USA Inc. | TRANS RF LDMOS 350W 50V | 0 | $137.55 | |
|
A2V09H525-04NR6
|
NXP USA Inc. | AIRFAST RF LDMOS WIDEBAND INTEGR | 0 | $136.64 | |
|
A2V07H525-04NR6
|
NXP USA Inc. | AIRFAST RF LDMOS WIDEBAND INTEGR | 0 | $136.64 |