RF FETs, MOSFETs
RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
NPTB00004A
|
M/A-Com Technology Solutions | HEMT N-CH 28V 5W DC-6GHZ 8SOIC | 277 | $14.48 | |
BLP9G0722-20GZ
|
Ampleon USA Inc. | RF MOSFET LDMOS 28V SOT1482-1 | 1106 | $0.00 | |
MMBFJ310LT1G
|
ON Semiconductor | RF MOSFET N-CH JFET 10V SOT23 | 51833 | $0.00 | |
MW7IC930NR1
|
NXP USA Inc. | IC AMP W-CDMA 728-768MHZ TO270 | 0 | $33.42 | |
A2I22D050NR1
|
NXP USA Inc. | IC AMP W-CDMA 1.8-2.2GHZ TO270WB | 272 | $0.00 | |
MW7IC930GNR1
|
NXP USA Inc. | IC AMP W-CDMA 728-768MHZ TO270 | 0 | $33.42 | |
MD7IC2755NR1
|
NXP USA Inc. | IC AMP WIMAX 2.7GHZ TO270 WB-14 | 0 | $72.06 | |
BLM6G22-30G,118
|
Ampleon USA Inc. | IC AMP W-CDMA 2.11-2.17GHZ 16HSO | 0 | $0.00 | |
MW7IC2725NR1
|
NXP USA Inc. | IC AMP WIMAX 2.7GHZ TO270 WBL-16 | 0 | $46.16 | |
|
|
NXP USA Inc. | MRFX1K80H 230MHZ REF DESIGN BRD | 1 | $1330.00 |
NPTB00004A
BLP9G0722-20GZ
MMBFJ310LT1G
MW7IC930NR1
A2I22D050NR1
MW7IC930GNR1
MD7IC2755NR1
BLM6G22-30G,118