RF FETs, MOSFETs
RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
MMRF1017NR3
|
NXP USA Inc. | FET RF 65V 960MHZ | 0 | $157.34 | |
AFT18H357-24SR6
|
NXP USA Inc. | FET RF 2CH 65V 1.81GHZ NI1230-4 | 0 | $156.33 | |
|
AFT18H356-24SR6
|
NXP USA Inc. | FET RF 2CH 65V 1.88GHZ NI1230-4 | 0 | $156.33 | |
A2T21S260-12SR3
|
NXP USA Inc. | IC TRANS RF LDMOS | 0 | $155.78 | |
A3G18H500-04SR3
|
NXP USA Inc. | RF MOSFET LDMOS 48V NI-780S-4L | 0 | $154.57 | |
|
A2T18S160W31SR3
|
NXP USA Inc. | IC TRANS RF LDMOS | 0 | $154.49 | |
|
AFT18P350-4S2LR6
|
NXP USA Inc. | FET RF 2CH 65V 1.81GHZ NI1230 | 0 | $153.34 | |
|
A2T20H330W24SR6
|
NXP USA Inc. | IC TRANS RF LDMOS | 0 | $148.90 | |
|
A2G26H281-04SR3
|
NXP USA Inc. | AIRFAST RF POWER GAN TRANSISTOR | 0 | $148.70 | |
MRF8P8300HSR6
|
NXP USA Inc. | FET RF 2CH 70V 820MHZ NI1230S | 0 | $142.94 |