RF FETs, MOSFETs
RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
MMRF1008GHR5
|
NXP USA Inc. | PULSE LATERAL N-CHANNEL RF POWER | 0 | $228.90 | |
MRF6V12250HSR5
|
NXP USA Inc. | FET RF 100V 1.03GHZ NI-780S | 0 | $228.00 | |
|
MMRF1020-04GNR3
|
NXP USA Inc. | FET RF 2CH 105V 920MHZ OM780-4G | 0 | $224.77 | |
MRF8P9300HSR6
|
NXP USA Inc. | FET RF 2CH 70V 960MHZ NI-1230HS | 0 | $214.41 | |
|
MMRF5300NR5
|
NXP USA Inc. | 2700-3500 MHZ 60 W PEAK 50V WI | 0 | $213.93 | |
|
A2T18H450W19SR6
|
NXP USA Inc. | IC TRANS RF LDMOS | 0 | $205.47 | |
MMRF1016HR5
|
NXP USA Inc. | FET RF 2CH 120V 225MHZ | 0 | $204.84 | |
AFV09P350-04NR3
|
NXP USA Inc. | FET RF 2CH 105V 920MHZ OM780-4 | 0 | $199.31 | |
|
AFV09P350-04GNR3
|
NXP USA Inc. | FET RF 2CH 105V 920MHZ OM780-4GW | 0 | $199.31 | |
|
A2T21H450W19SR6
|
NXP USA Inc. | 2.1GHZ 450W NI1230S-4S4S | 0 | $195.21 |