RF FETs, MOSFETs
RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
MMRF1009HSR5
|
NXP USA Inc. | FET RF 110V 1.03GHZ NI-780S | 0 | $502.27 | |
|
MMRF1011HSR5
|
NXP USA Inc. | FET RF 100V 1.4GHZ | 0 | $463.44 | |
MMRF1011HR5
|
NXP USA Inc. | FET RF 100V 1.4GHZ | 0 | $463.44 | |
MMRF1006HR5
|
NXP USA Inc. | FET RF 2CH 120V 450MHZ NI-1230 | 0 | $0.00 | |
MMRF1006HSR5
|
NXP USA Inc. | FET RF 2CH 120V 450MHZ NI-1230S | 0 | $443.28 | |
AFV10700GSR5
|
NXP USA Inc. | 1030MHZ 750W NI780GS-4L | 0 | $426.26 | |
|
MRF6V12500GSR5
|
NXP USA Inc. | PULSED LATERAL N-CHANNEL RF POWE | 0 | $368.81 | |
|
MRF6V12500HSR5
|
NXP USA Inc. | FET RF 110V 1.03GHZ NI-1230H | 0 | $367.91 | |
MRF8P29300HSR6
|
NXP USA Inc. | FET RF 2CH 65V 2.9GHZ NI1230S | 0 | $361.37 | |
|
MMRF1013HR5
|
NXP USA Inc. | FET RF 2CH 65V 2.9GHZ | 0 | $360.47 |