RF FETs, MOSFETs
RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
MRF8P29300HR6
|
NXP USA Inc. | FET RF 2CH 65V 2.9GHZ NI1230 | 0 | $360.47 | |
MMRF1013HSR5
|
NXP USA Inc. | FET RF 2CH 65V 2.9GHZ | 0 | $353.56 | |
AFG24S100HR5
|
NXP USA Inc. | IC TRANS RF LDMOS | 0 | $348.19 | |
|
|
NXP USA Inc. | FET RF 120V 1.3GHZ NI-780 | 0 | $300.01 | |
|
|
NXP USA Inc. | FET RF 100V 1.4GHZ NI780S | 0 | $292.18 | |
|
|
NXP USA Inc. | FET RF 100V 1.4GHZ NI780 | 0 | $291.27 | |
|
|
NXP USA Inc. | FET RF 120V 1.3GHZ NI780S | 0 | $279.14 | |
MMRF2010GNR1
|
NXP USA Inc. | INTEGRATED PWR AMP 1030-1090MHZ | 0 | $0.00 | |
MRFE6VP8600HSR5
|
NXP USA Inc. | FET RF 2CH 130V 860MHZ NI1230S | 0 | $253.88 | |
MMRF1306HSR5
|
NXP USA Inc. | FET RF 2CH 133V 230MHZ NI-1230S | 0 | $233.16 |
MRF8P29300HR6
MMRF1013HSR5
AFG24S100HR5
MMRF2010GNR1
MMRF1306HSR5