RF FETs, MOSFETs
RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
A3T21H455W23SR6
|
NXP USA Inc. | FORECAST ACP1230S-4L2L | 0 | $125.02 | |
|
A3T18H455W23SR6
|
NXP USA Inc. | AIRFAST RF POWER LDMOS TRANSISTO | 0 | $122.24 | |
|
MRF085HR3
|
NXP USA Inc. | WIDEBAND RF POWER LDMOS TRANSIST | 0 | $121.58 | |
|
AFT18S260W31SR3
|
NXP USA Inc. | IC TRANS RF LDMOS | 0 | $121.53 | |
|
AFT18S260W31GSR3
|
NXP USA Inc. | IC TRANS RF LDMOS | 0 | $121.53 | |
|
AFT18S290-13SR3
|
NXP USA Inc. | FET RF 65V 1.96GHZ NI-880X-2L4S | 0 | $120.91 | |
|
A3T18H400W23SR6
|
NXP USA Inc. | AIRFAST RF POWER LDMOS TRANSISTO | 0 | $120.59 | |
AFT09S282NR3
|
NXP USA Inc. | FET RF 70V 960MHZ OM-780-2 | 0 | $120.55 | |
|
A2G26H280-04SR3
|
NXP USA Inc. | AIRFAST RF POWER GAN TRANSISTOR | 0 | $118.87 | |
AFT26H200W03SR6
|
NXP USA Inc. | FET RF 2CH 65V 2.5GHZ NI1230S-4 | 0 | $118.87 |