RF FETs, MOSFETs
RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
A2T20H330W24NR6
|
NXP USA Inc. | AIRFAST RF POWER LDMOS TRANSISTO | 0 | $117.50 | |
|
AFT18H357-24NR6
|
NXP USA Inc. | IC TRANS RF LDMOS | 0 | $117.14 | |
|
A3T21H450W23SR6
|
NXP USA Inc. | AIRFAST RF POWER LDMOS TRANSISTO | 0 | $117.12 | |
MRFE6VP5600HSR5
|
NXP USA Inc. | FET RF 2CH 130V 230MHZ NI1230S | 0 | $115.67 | |
|
A2G22S160-01SR3
|
NXP USA Inc. | IC TRANS RF LDMOS | 0 | $115.15 | |
A2G22S251-01SR3
|
NXP USA Inc. | AIRFAST RF POWER GAN TRANSISTOR | 0 | $114.91 | |
|
A2T18H100-25SR3
|
NXP USA Inc. | FET RF 2CH 65V 1.81GHZ | 0 | $113.84 | |
|
MHT1004GNR3
|
NXP USA Inc. | RF POWER LDMOS TRANSISTOR 2450 | 0 | $113.59 | |
|
MRF24300GNR3
|
NXP USA Inc. | RF POWER LDMOS TRANSISTOR 2450 | 0 | $113.59 | |
AFT26H250-24SR6
|
NXP USA Inc. | FET RF 2CH 65V 2.5GHZ NI1230S-4 | 0 | $113.39 |