IGBT Modules
Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
VS-GT100TP120N
|
Vishay / Semiconductor - Diodes Division | IGBT 1200V 180A 652W INT-A-PAK | 0 | $0.00 | |
VS-GT100DA120U
|
Vishay / Semiconductor - Diodes Division | IGBT 1200V 258A 893W SOT-227 | 0 | $0.00 | |
|
VS-GB75SA120UP
|
Vishay / Semiconductor - Diodes Division | MODULE IGBT SOT-227 | 0 | $0.00 | |
|
VS-GB75LP120N
|
Vishay / Semiconductor - Diodes Division | IGBT 1200V 170A 658W INT-A-PAK | 0 | $0.00 | |
|
VS-GB75DA120UP
|
Vishay / Semiconductor - Diodes Division | MODULE IGBT SOT-227 | 0 | $0.00 | |
|
VS-GB70NA60UF
|
Vishay / Semiconductor - Diodes Division | IGBT 600V 111A 447W SOT-227 | 0 | $0.00 | |
|
VS-GB70LA60UF
|
Vishay / Semiconductor - Diodes Division | IGBT 600V 111A 447W SOT-227 | 0 | $0.00 | |
|
VS-GB50NA120UX
|
Vishay / Semiconductor - Diodes Division | IGBT 1200V 84A 431W SOT-227 | 0 | $0.00 | |
|
VS-GB50LA120UX
|
Vishay / Semiconductor - Diodes Division | IGBT 1200V 84A 431W SOT-227 | 0 | $0.00 | |
|
VS-GB100TP120U
|
Vishay / Semiconductor - Diodes Division | IGBT 1200V 150A 735W INT-A-PAK | 0 | $0.00 |