IGBT Modules
Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
APTGT150SK170G
|
Microsemi Corporation | IGBT 1700V 250A 890W SP6 | 0 | $111.54 | |
|
FF150R17KE4HOSA1
|
Infineon Technologies | MODULE IGBT 1700V AG-62MM-1 | 0 | $111.47 | |
|
FF300R07ME4B11BOSA1
|
Infineon Technologies | IGBT MODULE VCES 600V 300A | 0 | $111.05 | |
APTGT150SK120G
|
Microsemi Corporation | IGBT 1200V 220A 690W SP6 | 1 | $110.94 | |
|
FF150R12MS4GBOSA1
|
Infineon Technologies | IGBT MODULE VCES 1200V 150A | 0 | $110.76 | |
|
FZ400R12KS4HOSA1
|
Infineon Technologies | MOD IGBT MED PWR 62MM-2 | 0 | $110.66 | |
|
FF200R12KS4HOSA1
|
Infineon Technologies | IGBT MODULE VCES 1200V 200A | 0 | $110.66 | |
|
FS75R12KE3GBOSA1
|
Infineon Technologies | MOD IGBT LOW PWR ECONO3-4 | 0 | $110.47 | |
|
MII200-12A4
|
IXYS | MOD IGBT RBSOA 1200V 270A Y3-DCB | 0 | $110.25 | |
|
MUBW50-12T8
|
IXYS | MODULE IGBT CBI E3 | 0 | $109.98 |