IGBT Modules
Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
FF150R17ME3GBOSA1
|
Infineon Technologies | IGBT MODULE VCES 1200V 150A | 0 | $109.30 | |
|
FS75R12KE3B9BOSA1
|
Infineon Technologies | MOD IGBT LOW PWR ECONO2-6 | 0 | $109.27 | |
|
MWI75-12T7T
|
IXYS | IGBT MOD TRENCH SIX-PACK E3 | 0 | $108.58 | |
|
GSID150A120S6A4
|
Global Power Technologies Group | SILICON IGBT MODULES | 0 | $108.51 | |
|
FF225R12ME4BOSA1
|
Infineon Technologies | IGBT MODULE VCES 1200V 225A | 0 | $107.51 | |
|
FP50R12KT3BOSA1
|
Infineon Technologies | IGBT MODULE VCES 600V 50A | 0 | $107.14 | |
|
APTGT200DH60G
|
Microsemi Corporation | IGBT MOD TRENCH ASYM BRIDGE SP6 | 0 | $106.93 | |
|
FF200R12KE4PHOSA1
|
Infineon Technologies | MOD IGBT MED PWR 62MM-1 | 0 | $106.88 | |
|
DDB6U180N16RRB37BOSA1
|
Infineon Technologies | IGBT DDB6U180N16RRB37BOSA1 | 0 | $106.56 | |
|
FP50R12KT4GB15BOSA1
|
Infineon Technologies | IGBT MODULE VCES 600V 50A | 0 | $106.12 |