IGBT Modules
Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
MIXA81WB1200TEH
|
IXYS | IGBT MODULE 1200V 84A | 0 | $116.40 | |
|
VS-GB150LH120N
|
Vishay / Semiconductor - Diodes Division | IGBT 1200V 300A 1389W INT-A-PAK | 0 | $116.21 | |
|
F475R12KS4B11BOSA1
|
Infineon Technologies | IGBT MODULE VCES 600V 75A | 0 | $115.99 | |
|
FF225R12ME4PBPSA1
|
Infineon Technologies | MEDIUM POWER ECONO | 0 | $115.56 | |
|
FF225R12ME4PB11BPSA1
|
Infineon Technologies | MOD IGBT MED PWR ECONOD-4 | 0 | $115.51 | |
MG1275H-XN2MM
|
Littelfuse Inc. | IGBT MOD 1200V 75A PKG H CRCT:X | 0 | $115.29 | |
|
APTGLQ300SK120G
|
Microsemi Corporation | POWER MODULE - IGBT | 0 | $115.27 | |
|
APTGT450SK60G
|
Microsemi Corporation | IGBT 600V 550A 1750W SP6 | 0 | $115.23 | |
|
F475R12KS4BOSA1
|
Infineon Technologies | IGBT MODULE VCES 600V 75A | 0 | $114.75 | |
|
MIXA150W1200TEH
|
IXYS | IGBT MODULE 1200V 150A HEX | 0 | $114.48 |