IGBT Modules
Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
MIEB101W1200EH
|
IXYS | IGBT MODULE 1200V 183A HEX | 0 | $126.15 | |
MWI150-06A8
|
IXYS | TRANS 16BIY 3-PH 600V 115AMP | 0 | $125.37 | |
MIXA600PF650TSF
|
IXYS | IGBT MODULE 650V 490A | 0 | $124.86 | |
VS-GB50YF120N
|
Vishay / Semiconductor - Diodes Division | IGBT 1200V 66A 330W ECONO | 0 | $130.92 | |
FF300R12ME3BOSA1
|
Infineon Technologies | MOD IGBT MED PWR ECONOD-3 | 0 | $129.98 | |
APTGT400DA120G
|
Microsemi Corporation | IGBT 1200V 560A 1785W SP6 | 0 | $136.88 | |
APTGT300DH60G
|
Microsemi Corporation | IGBT MOD TRENCH ASYM BRIDGE SP6 | 0 | $136.82 | |
FF225R17ME3BOSA1
|
Infineon Technologies | MOD IGBT MED PWR ECONOD-3 | 0 | $140.32 | |
FP150R07N3E4B11BOSA1
|
Infineon Technologies | IGBT MODULE VCES 650V 150A | 0 | $140.21 | |
FP75R12KT3BOSA1
|
Infineon Technologies | IGBT MODULE VCES 600V 75A | 0 | $140.12 |
MIEB101W1200EH
FP75R12KT3BOSA1