Vishay / Semiconductor - Diodes Division VS-GB50YF120N

Manufacturer
Vishay / Semiconductor - Diodes Division
Model
VS-GB50YF120N
Datasheet
VS-GB50YF120N PDF
Description
IGBT 1200V 66A 330W ECONO
Availability
OUT OF STOCK

$130.92

Product Detail

Attribute Name Attribute Value
Package / Case Module
Operating Temperature -40°C ~ 175°C (TJ)
Supplier Device Package Module
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 600A
Input Standard
Current - Collector (Ic) (Max) 720A
Series -
Current - Collector Cutoff (Max) 1.8mA
IGBT Type PT
Voltage - Collector Emitter Breakdown (Max) 650V
Part Status Active
Power - Max 1750W
Configuration Half Bridge
Mounting Type Chassis Mount
NTC Thermistor Yes

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