IXYS IXYN100N65C3H1

Manufacturer
IXYS
Model
IXYN100N65C3H1
Datasheet
IXYN100N65C3H1 PDF
Description
IGBT XPT 650V 166A SOT-227B
Availability
IN STOCK

Stock: 1777

$24.32

Product Detail

Attribute Name Attribute Value
Technology GaNFET (Gallium Nitride)
Input Capacitance (Ciss) (Max) @ Vds 90pF @ 50V
FET Feature -
Current - Continuous Drain (Id) @ 25°C 1.7A (Ta)
Part Status Active
Drive Voltage (Max Rds On, Min Rds On) 5V
Mounting Type Surface Mount
Package / Case Die
Vgs(th) (Max) @ Id 2.5V @ 600µA
Operating Temperature -40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 65mOhm @ 1A, 5V
Series eGaN®
Power Dissipation (Max) -
FET Type N-Channel
Supplier Device Package Die
Packaging Digi-Reel®
Gate Charge (Qg) (Max) @ Vgs 0.91nC @ 5V
Vgs (Max) +6V, -4V
Drain to Source Voltage (Vdss) 100V

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