Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

Part Number Manufacturer Description Quantity Price Option
MPA201 Microsemi Corporation RF TRANS NPN 22V 2GHZ 55AU 0 $0.00
MDS800 Microsemi Corporation RF TRANS NPN 65V 1.09GHZ 55ST-1 0 $0.00
MDS70 Microsemi Corporation RF TRANS NPN 65V 1.09GHZ 55CX 0 $0.00
MDS60L Microsemi Corporation RF TRANS NPN 65V 1.09GHZ 55AW 0 $0.00
MDS500L Microsemi Corporation RF TRANS NPN 70V 1.09GHZ 55ST 0 $0.00
MDS400 Microsemi Corporation RF TRANS NPN 55V 1.09GHZ 55KT 0 $0.00
1214-220M Microsemi Corporation RF TRANS NPN 70V 1.4GHZ 55ST 0 $0.00
1214-150L Microsemi Corporation RF TRANS NPN 65V 1.4GHZ 55ST-1 0 $0.00
1214-110M Microsemi Corporation RF TRANS NPN 75V 1.4GHZ 55KT 0 $0.00
10A060 Microsemi Corporation RF TRANS NPN 24V 1GHZ 55FT 0 $0.00