Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

Part Number Manufacturer Description Quantity Price Option
1075MP Microsemi Corporation RF TRANS NPN 65V 1.15GHZ 55FW-1 0 $0.00
1015MP Microsemi Corporation RF TRANS NPN 65V 1.15GHZ 55FW 0 $0.00
1014-6A Microsemi Corporation RF TRANS NPN 50V 1.4GHZ 55LV 0 $0.00
1014-12 Microsemi Corporation RF TRANS NPN 50V 1.4GHZ 55LT 0 $0.00
1004MP Microsemi Corporation RF TRANS 50V 1.215GHZ 55FW-1 0 $0.00
1002MP Microsemi Corporation RF TRANS 50V 1.215GHZ 55FW-1 0 $0.00
1000MP Microsemi Corporation RF TRANS NPN 1.15GHZ 55FW 0 $0.00
0912-25 Microsemi Corporation RF TRANS NPN 55V 1.215GHZ 55CT 0 $0.00
0910-60M Microsemi Corporation RF TRANS NPN 65V 1GHZ 55AW 0 $0.00
0910-150M Microsemi Corporation RF TRANS NPN 65V 1GHZ 55KT 0 $0.00