Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

Part Number Manufacturer Description Quantity Price Option
MSC1400M Microsemi Corporation RF TRANS NPN 65V 1.15GHZ M216 0 $0.00
MSC1350M Microsemi Corporation RF TRANS NPN 65V 1.15GHZ M218 0 $0.00
MSC1175M Microsemi Corporation RF TRANS NPN 65V 1.15GHZ M218 0 $0.00
MS652S Microsemi Corporation RF TRANS NPN 16V 512MHZ M123 0 $0.00
MS1008 Microsemi Corporation RF TRANS NPN 55V 30MHZ M164 0 $0.00
MS1004 Microsemi Corporation RF TRANS NPN 55V 30MHZ M177 0 $0.00
MS1003 Microsemi Corporation RF TRANS NPN 18V 175MHZ M111 0 $0.00
MS1001 Microsemi Corporation RF TRANS NPN 18V 30MHZ M174 0 $0.00
MRF586 Microsemi Corporation RF TRANS NPN 17V 3GHZ TO39 0 $0.00
MRF545 Microsemi Corporation RF TRANS PNP 70V 1.4GHZ TO39 0 $0.00