Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

Part Number Manufacturer Description Quantity Price Option
2225-4L Microsemi Corporation RF TRANS NPN 40V 2.5GHZ 55LV 0 $0.00
1517-110M Microsemi Corporation RF TRANS NPN 70V 1.65GHZ 55AW-1 0 $0.00
1214-55 Microsemi Corporation RF TRANS NPN 50V 1.4GHZ 55AW 0 $0.00
1214-370M Microsemi Corporation RF TRANS NPN 75V 1.4GHZ 55ST 0 $0.00
1214-32L Microsemi Corporation RF TRANS NPN 50V 1.4GHZ 55AW-1 0 $0.00
1214-300M Microsemi Corporation RF TRANS NPN 50V 1.4GHZ 55ST 0 $0.00
1214-300 Microsemi Corporation RF TRANS NPN 50V 1.4GHZ 55KT 0 $0.00
1214-30 Microsemi Corporation RF TRANS NPN 50V 1.4GHZ 55AW 0 $0.00
UMIL100A Microsemi Corporation RF TRANS NPN 31V 400MHZ 55JU 0 $0.00
UMIL25 Microsemi Corporation RF TRANS NPN 33V 400MHZ 55HV 0 $0.00