Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

Part Number Manufacturer Description Quantity Price Option
MS1402 Microsemi Corporation RF TRANS NPN 16V 512MHZ M122 0 $0.00
MS1337 Microsemi Corporation RF TRANS NPN 18V 175MHZ M113 0 $0.00
MS1336 Microsemi Corporation RF TRANS NPN 18V 175MHZ M135 0 $0.00
MS1261 Microsemi Corporation RF TRANS NPN 18V 175MHZ M122 0 $0.00
MS1227 Microsemi Corporation RF TRANS NPN 18V 30MHZ M113 0 $0.00
MS1226 Microsemi Corporation RF TRANS NPN 36V 30MHZ M113 0 $0.00
2N2857 Microsemi Corporation RF TRANS NPN 15V 500MHZ TO72 0 $0.00
2A8 Microsemi Corporation RF TRANS NPN 21V 2GHZ 55EU 0 $0.00
23A008 Microsemi Corporation RF TRANS NPN 22V 3.7GHZ 55BT 0 $0.00
23A005 Microsemi Corporation RF TRANS NPN 22V 4.3GHZ 55BT 0 $0.00