Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

Part Number Manufacturer Description Quantity Price Option
TAN300 Microsemi Corporation RF TRANS NPN 65V 1.215GHZ 55KT 0 $0.00
UTV200 Microsemi Corporation RF TRANS NPN 28V 860MHZ 55JV 0 $0.00
UTV080 Microsemi Corporation RF TRANS NPN 28V 860MHZ 55JV 0 $0.00
MS2201 Microsemi Corporation RF TRANS NPN 45V 1.15GHZ M220 0 $0.00
MS2200 Microsemi Corporation RF TRANS NPN 65V 500MHZ M102 0 $0.00
MS1649 Microsemi Corporation RF TRANS NPN 16V 470MHZ TO39 0 $0.00
MS1579 Microsemi Corporation RF TRANS NPN 25V 860MHZ M156 0 $0.00
MS1512 Microsemi Corporation RF TRANS NPN 25V 860MHZ M122 0 $0.00
MS1409 Microsemi Corporation RF TRANS NPN 40V 175MHZ TO39 0 $0.00
MS1406 Microsemi Corporation RF TRANS NPN 35V 175MHZ M135 0 $0.00