Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

Part Number Manufacturer Description Quantity Price Option
ITC1100 Microsemi Corporation RF TRANS NPN 65V 1.03GHZ 55SW 0 $0.00
DME800 Microsemi Corporation RF TRANS NPN 65V 1.15GHZ 55ST-1 0 $0.00
DME500 Microsemi Corporation RF TRANS NPN 55V 1.15GHZ 55KT 0 $0.00
DME400A Microsemi Corporation TRANSISTOR BIPO 55AW-1 0 $0.00
2N5179 Microsemi Corporation RF TRANS NPN 12V 200MHZ TO72 0 $0.00
2N5109 Microsemi Corporation RF TRANS NPN 20V 1.2GHZ TO39 0 $0.00
2N5031 Microsemi Corporation RF TRANS NPN 10V 400MHZ TO72 0 $0.00
2N4427 Microsemi Corporation RF TRANS NPN 40V 500MHZ TO39 0 $0.00
SD1444 Microsemi Corporation RF TRANS NPN 16V 512MHZ TO39 0 $0.00
SD1127 Microsemi Corporation RF TRANS NPN 18V 175MHZ TO39 0 $0.00