Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

Part Number Manufacturer Description Quantity Price Option
MS2361 Microsemi Corporation RF TRANS NPN 65V 1.15GHZ M115 0 $0.00
MS2341 Microsemi Corporation RF TRANS NPN 65V 1.15GHZ M115 0 $0.00
0204-125 Microsemi Corporation RF TRANS NPN 60V 400MHZ 55JT 0 $0.00
0105-50 Microsemi Corporation RF TRANS NPN 65V 500MHZ 55JT 0 $0.00
MS2322 Microsemi Corporation RF TRANS NPN 65V 1.15GHZ M115 0 $0.00
MS2321 Microsemi Corporation RF TRANS NPN 65V 1.15GHZ M105 0 $0.00
MS2272 Microsemi Corporation RF TRANS NPN 65V 1.215GHZ M216 0 $0.00
MS2267 Microsemi Corporation RF TRANS NPN 60V 1.215GHZ M214 0 $0.00
MS2215 Microsemi Corporation RF TRANS NPN 55V 1.215GHZ M216 0 $0.00
MS2214 Microsemi Corporation RF TRANS NPN 55V 1.215GHZ M218 0 $0.00