Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

Part Number Manufacturer Description Quantity Price Option
MS1202 Microsemi Corporation RF TRANS NPN 35V 136MHZ M135 0 $0.00
10A030 Microsemi Corporation RF TRANS NPN 24V 2.5GHZ 55FT 0 $0.00
MRF586G Microsemi Corporation RF TRANS NPN 17V 3GHZ TO39 0 $0.00
MS2228 Microsemi Corporation RF TRANS NPN 65V 1.09GHZ M214 0 $0.00
TCS1200 Microsemi Corporation RF TRANS NPN 65V 1.03GHZ 55TU-1 0 $0.00
MS1582 Microsemi Corporation RF TRANS NPN 30V 860MHZ M173 0 $0.00
TPR400 Microsemi Corporation RF TRANS NPN 55V 1.09GHZ 55CX 0 $0.00
MS1007 Microsemi Corporation RF TRANS NPN 55V 30MHZ M174 0 $0.00
1090MP Microsemi Corporation RF TRANS NPN 65V 1.15GHZ 55FW-1 0 $0.00
MS2393 Microsemi Corporation RF TRANS NPN 65V 1.15GHZ M138 0 $0.00