Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

Part Number Manufacturer Description Quantity Price Option
UMIL80 Microsemi Corporation RF TRANS NPN 31V 500MHZ 55HV 0 $0.00
UTV040 Microsemi Corporation RF TRANS NPN 25V 860MHZ 55FT 0 $0.00
UTV020 Microsemi Corporation RF TRANS NPN 25V 860MHZ 55FT 0 $0.00
UTV010 Microsemi Corporation RF TRANS NPN 24V 860MHZ 55FT 0 $0.00
UMIL3 Microsemi Corporation RF TRANS NPN 30V 400MHZ 55FT 0 $0.00
TAN75A Microsemi Corporation RF TRANS NPN 50V 1.215GHZ 55AZ 0 $0.00
TAN250A Microsemi Corporation RF TRANS NPN 60V 1.215GHZ 55AW 0 $0.00
TAN150 Microsemi Corporation RF TRANS NPN 55V 1.215GHZ 55AT 0 $0.00
S200-50 Microsemi Corporation RF TRANS NPN 110V 30MHZ 55HX 0 $0.00
MSC1450M Microsemi Corporation RF TRANS NPN 65V 1.09GHZ M216 0 $0.00