Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

Part Number Manufacturer Description Quantity Price Option
0510-50A Microsemi Corporation RF TRANS 27V 1GHZ 55AV 0 $0.00
MS2554 Microsemi Corporation RF TRANS NPN 65V 1.15GHZ M218 0 $0.00
MS2553C Microsemi Corporation RF TRANS NPN 25V 1.15GHZ M220 0 $0.00
MS2552 Microsemi Corporation RF TRANS NPN 65V 1.15GHZ 2NLFL 0 $0.00
MS2473 Microsemi Corporation RF TRANS NPN 65V 1.09GHZ M112 0 $0.00
MS2472 Microsemi Corporation RF TRANS NPN 65V 1.15GHZ M112 0 $0.00
MS2441 Microsemi Corporation RF TRANS NPN 65V 1.15GHZ M112 0 $0.00
MAX2602ESA Maxim Integrated RF TRANS NPN 15V 1GHZ 8SOIC 0 $0.00
BFR92WH6327XTSA1 Infineon Technologies RF TRANS NPN 15V 5GHZ SOT323-3 0 $0.00
BFQ 19S E6327 Infineon Technologies RF TRANS NPN 15V 5.5GHZ SOT89 0 $0.00