Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
IRG4RC10UTRR
|
Infineon Technologies | IGBT 600V 8.5A 38W DPAK | 0 | $0.00 | |
|
IRG4RC10UTR
|
Infineon Technologies | IGBT 600V 8.5A 38W DPAK | 0 | $0.00 | |
|
IRG4RC10UTRL
|
Infineon Technologies | IGBT 600V 8.5A 38W DPAK | 0 | $0.00 | |
|
IRG4RC10UD
|
Infineon Technologies | IGBT 600V 8.5A 38W DPAK | 0 | $0.00 | |
|
IRG4RC10STR
|
Infineon Technologies | IGBT 600V 14A 38W DPAK | 0 | $0.00 | |
|
IRG4RC10STRL
|
Infineon Technologies | IGBT 600V 14A 38W DPAK | 0 | $0.00 | |
|
IRG4RC10SD
|
Infineon Technologies | IGBT 600V 14A 38W DPAK | 0 | $0.00 | |
|
IRG4RC10KTRR
|
Infineon Technologies | IGBT 600V 9A 38W DPAK | 0 | $0.00 | |
|
IRG4RC10KTR
|
Infineon Technologies | IGBT 600V 9A 38W DPAK | 0 | $0.00 | |
|
IRG4RC10KTRL
|
Infineon Technologies | IGBT 600V 9A 38W DPAK | 0 | $0.00 |