Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

Part Number Manufacturer Description Quantity Price Option
IRG4RC20FTRR Infineon Technologies IGBT 600V 22A 66W DPAK 0 $0.00
IRG4RC20FTRL Infineon Technologies IGBT 600V 22A 66W DPAK 0 $0.00
IRG4RC20FTR Infineon Technologies IGBT 600V 22A 66W DPAK 0 $0.00
IRG4BC30FD-STRR Infineon Technologies IGBT 600V 31A 100W D2PAK 0 $0.00
IRG4BC30F-STRR Infineon Technologies IGBT 600V 31A 100W D2PAK 0 $0.00
IRG4BC30F-STRL Infineon Technologies IGBT 600V 31A 100W D2PAK 0 $0.00
IRG4BC20UD-STRR Infineon Technologies IGBT 600V 13A 60W D2PAK 0 $0.00
IRG4BC20UD-STRL Infineon Technologies IGBT 600V 13A 60W D2PAK 0 $0.00
IRG4BC15UD-STRL Infineon Technologies IGBT 600V 14A 49W D2PAK 0 $0.00
IRG4BC10SD-S Infineon Technologies IGBT 600V 14A 38W D2PAK 0 $0.00