Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

Part Number Manufacturer Description Quantity Price Option
IRG4RC10KD Infineon Technologies IGBT 600V 9A 38W DPAK 0 $0.00
IRG4BC30S-S Infineon Technologies IGBT 600V 34A 100W D2PAK 0 $0.00
IRGS14C40L Infineon Technologies IGBT 430V 20A 125W D2PAK 0 $0.00
92-0235 Infineon Technologies IGBT 430V 20A 125W TO220AB 0 $0.00
IRG4BC10SD-L Infineon Technologies IGBT 600V 14A 38W TO262 0 $0.00
IRG4BC15UD-L Infineon Technologies IGBT 600V 14A 49W TO262 0 $0.00
IRG4BC15UD-S Infineon Technologies IGBT 600V 14A 49W D2PAK 0 $0.00
IRG4BC15UD Infineon Technologies IGBT 600V 14A 49W TO220AB 0 $0.00
IRG4RC20F Infineon Technologies IGBT 600V 22A 66W DPAK 0 $0.00
IRG4BAC50W-S Infineon Technologies IGBT 600V 55A 200W SUPER 220 0 $0.00