Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

Part Number Manufacturer Description Quantity Price Option
IRG4BC20U-S Infineon Technologies IGBT 600V 16A 60W TO220-3 0 $0.00
IRG4BC20FD-STRR Infineon Technologies IGBT 600V 16A 60W D2PAK 0 $0.00
IRG4BC20FD-STRL Infineon Technologies IGBT 600V 16A 60W D2PAK 0 $0.00
IRG4PH30K Infineon Technologies IGBT 1200V 20A 100W TO247AC 0 $0.00
IRG4PH20K Infineon Technologies IGBT 1200V 11A 60W TO247AC 0 $0.00
IRG4PC50K Infineon Technologies IGBT 600V 52A 200W TO247AC 0 $0.00
IRG4PC30U Infineon Technologies IGBT 600V 23A 100W TO247AC 0 $0.00
IRG4PC30S Infineon Technologies IGBT 600V 34A 100W TO247AC 0 $0.00
IRG4PC30K Infineon Technologies IGBT 600V 28A 100W TO247AC 0 $0.00
IRG4P254S Infineon Technologies IGBT 250V 98A 200W TO247AC 0 $0.00