Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

Part Number Manufacturer Description Quantity Price Option
IRG4BC10K Infineon Technologies IGBT 600V 9A 38W TO220AB 0 $0.00
IRG4BC20SD Infineon Technologies IGBT 600V 19A 60W TO220AB 0 $0.00
IRG4IBC30W Infineon Technologies IGBT 600V 17A 45W TO220FP 0 $0.00
IRG4BC30K Infineon Technologies IGBT 600V 28A 100W TO220AB 0 $0.00
IRG4BC20K Infineon Technologies IGBT 600V 16A 60W TO220AB 0 $0.00
IRG4BC10S Infineon Technologies IGBT 600V 14A 38W TO220AB 0 $0.00
IRG4RC10K Infineon Technologies IGBT 600V 9A 38W DPAK 0 $0.00
IRG4BH20K-S Infineon Technologies IGBT 1200V 11A 60W D2PAK 0 $0.00
IRG4BH20K-L Infineon Technologies IGBT 1200V 11A 60W TO262 0 $0.00
IRG4BC30U-S Infineon Technologies IGBT 600V 23A 100W D2PAK 0 $0.00