IGBT Modules
Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
F1235R12KT4GBOSA1
|
Infineon Technologies | IGBT F1235R12KT4GBOSA1 | 0 | $0.00 | |
|
FZ1200R17KE3B2NOSA1
|
Infineon Technologies | IGBT MODULE 1700V 1200A | 0 | $0.00 | |
|
FZ1200R12KL4CNOSA1
|
Infineon Technologies | IGBT MODULE 1200V 1200A | 0 | $0.00 | |
|
FZ1200R12KF5NOSA1
|
Infineon Technologies | IGBT MODULE 1200V 1200A | 0 | $0.00 | |
|
VS-150MT060WDF-P
|
Vishay / Semiconductor - Diodes Division | OUTPUT & SW MODULES - MTP SWITCH | 0 | $0.00 | |
|
FS820R08A6P2LMBPSA1
|
Infineon Technologies | HYBRID PACK DRIVE | 0 | $0.00 | |
|
FS150R07N3E4B11BOSA1
|
Infineon Technologies | IGBT MODULE VCES 650V 150A | 0 | $0.00 | |
|
FF1000R17IE4DB2S4BOSA2
|
Infineon Technologies | MOD IGBT 1700V PRIME3-1 | 0 | $0.00 | |
|
FF1000R17IE4S4BOSA2
|
Infineon Technologies | MOD IGBT 1700V PRIME3-1 | 0 | $0.00 | |
|
VS-GB100TS120NPBF
|
Vishay / Semiconductor - Diodes Division | IGBT 1200V 200A INT-A-PAK | 0 | $0.00 |