IGBT Modules
Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
APTGT400SK120G
|
Microsemi Corporation | IGBT 1200V 560A 1785W SP6 | 0 | $136.88 | |
|
FF450R07ME4B11BOSA1
|
Infineon Technologies | IGBT MODULE VCES 600V 450A | 0 | $136.75 | |
|
FS75R17KE3BOSA1
|
Infineon Technologies | MOD IGBT LOW PWR ECONO3-4 | 0 | $136.00 | |
|
FS150R07N3E4BOSA1
|
Infineon Technologies | IGBT MODULE 650V 150A | 0 | $135.85 | |
|
APTGL475SK120D3G
|
Microsemi Corporation | IGBT 1200V 610A 2080W D3 | 0 | $135.42 | |
|
APTGL475DA120D3G
|
Microsemi Corporation | IGBT 1200V 610A 2080W D3 | 0 | $135.42 | |
|
FP75R12KT4B15BOSA1
|
Infineon Technologies | IGBT MODULE VCES 600V 75A | 0 | $135.34 | |
|
FP75R12KT4BOSA1
|
Infineon Technologies | IGBT MODULE VCES 600V 75A | 0 | $135.34 | |
|
VS-GB150TH120U
|
Vishay / Semiconductor - Diodes Division | IGBT 1200V 280A 1147W INT-A-PAK | 0 | $133.66 | |
|
FD400R12KE3B5HOSA1
|
Infineon Technologies | IGBT MODULE VCES 650V 400A | 0 | $132.21 |