IGBT Modules
Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
FS100R12KT4GBOSA1
|
Infineon Technologies | IGBT MODULE VCES 600V 100A | 0 | $139.17 | |
|
FF225R12MS4BOSA1
|
Infineon Technologies | IGBT MODULE VCES 1200V 225A | 0 | $139.12 | |
|
FD600R06ME3_B11_S2
|
Infineon Technologies | IGBT MODULE VCES 600V 600A | 0 | $138.95 | |
|
FP150R07N3E4BOSA1
|
Infineon Technologies | IGBT MODULE VCES 650V 150A | 0 | $138.74 | |
|
FZ600R12KS4HOSA1
|
Infineon Technologies | MOD IGBT MED PWR 62MM-2 | 0 | $138.41 | |
|
FS150R07PE4BOSA1
|
Infineon Technologies | IGBT MODULE VCES 650V 150A | 0 | $138.12 | |
|
FF225R17ME4BOSA1
|
Infineon Technologies | IGBT MODULE VCES 1200V 225A | 0 | $137.75 | |
|
FZ400R12KS4PHOSA1
|
Infineon Technologies | MOD IGBT MED PWR 62MM-2 | 0 | $137.46 | |
|
APTGT400U120D4G
|
Microsemi Corporation | IGBT 1200V 600A 2250W D4 | 0 | $137.21 | |
|
GSID100A120T2P2
|
Global Power Technologies Group | SILICON IGBT MODULES | 0 | $137.13 |