Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
RJH60M2DPP-M0#T2
|
Renesas Electronics America | IGBT 600V 25A 33.8W TO-220FL | 0 | $0.00 | |
RJH60V1BDPE-00#J3
|
Renesas Electronics America | IGBT 600V 16A 52W LDPAK | 0 | $0.00 | |
|
RJH60A85RDPE-00#J3
|
Renesas Electronics America | IGBT 600V 30A 113W LDPAK | 0 | $0.00 | |
|
RJH60V1BDPP-M0#T2
|
Renesas Electronics America | IGBT 600V 16A 30W TO-220FL | 0 | $0.00 | |
|
RJH60M3DPE-00#J3
|
Renesas Electronics America | IGBT 600V 35A 113W LDPAK | 0 | $0.00 | |
|
RJH60M2DPE-00#J3
|
Renesas Electronics America | IGBT 600V 25A 63W LDPAK | 0 | $0.00 | |
RJP60F0DPM-00#T1
|
Renesas Electronics America | IGBT 600V 50A 40W TO-3PFM | 0 | $0.00 | |
|
RJP60F0DPE-00#J3
|
Renesas Electronics America | IGBT 600V 50A 122W LDPAK | 0 | $0.00 | |
RJH1CV5DPK-00#T0
|
Renesas Electronics America | IGBT 1200V 50A 245W TO-3P | 0 | $0.00 | |
|
RJP60D0DPM-00#T1
|
Renesas Electronics America | IGBT 600V 45A 40W TO-3PFM | 0 | $0.00 |