Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
FGA25S125P
|
ON Semiconductor | IGBT 1250V 50A 250W TO-3PN | 0 | $0.00 | |
|
FGA20S125P
|
ON Semiconductor | IGBT 1250V 40A 250W TO-3PN | 0 | $0.00 | |
RJH60F7BDPQ-A0#T0
|
Renesas Electronics America | IGBT 600V 90A 328.9W TO-247A | 0 | $0.00 | |
RJH60F7ADPK-00#T0
|
Renesas Electronics America | IGBT 600V 90A 328.9W TO-3P | 0 | $0.00 | |
|
RJH60F6DPK-00#T0
|
Renesas Electronics America | IGBT 600V 85A 297.6W TO-3P | 0 | $0.00 | |
|
RJH60F5DPK-00#T0
|
Renesas Electronics America | IGBT 600V 80A 260.4W TO-3P | 0 | $0.00 | |
RJH60D6DPM-00#T1
|
Renesas Electronics America | IGBT 600V 80A 50W TO-3PFM | 0 | $0.00 | |
|
RJH60F5BDPQ-A0#T0
|
Renesas Electronics America | IGBT 600V 80A 260.4W TO-247A | 0 | $0.00 | |
|
RJH60F0DPQ-A0#T0
|
Renesas Electronics America | IGBT 600V 50A 201.6W TO-247A | 0 | $0.00 | |
RJH60M3DPP-M0#T2
|
Renesas Electronics America | IGBT 600V 35A 39.7W TO-220FL | 0 | $0.00 |