Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

Part Number Manufacturer Description Quantity Price Option
IRGR4045DPBF Infineon Technologies IGBT 600V 12A 77W DPAK 0 $0.00
IXGH10N300 IXYS IGBT 3000V 18A 100W TO247AD 0 $0.00
IXGV25N250S IXYS IGBT 2500V 60A 250W PLUS220SMD 0 $0.00
IKD04N60RF Infineon Technologies IGBT 600V 8A 75W TO252-3 0 $0.00
GA35XCP12-247 GeneSiC Semiconductor IGBT 1200V SOT247 0 $0.00
IXGX28N140B3H1 IXYS IGBT 1400V 60A 300W PLUS247 0 $0.00
IXGT20N140C3H1 IXYS IGBT 1400V 42A 250W TO268 0 $0.00
IXGQ50N60C4D1 IXYS IGBT 600V 90A 300W TO3P 0 $0.00
IXGQ50N60B4D1 IXYS IGBT 600V 100A 300W TO3P 0 $0.00
IXGP50N60C4 IXYS IGBT 600V 90A 300W TO220 0 $0.00