Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

Part Number Manufacturer Description Quantity Price Option
IRG8P08N120KD-EPBF Infineon Technologies IGBT 1200V 15A 89W TO-247AD 0 $0.00
IRG8P60N120KDPBF Infineon Technologies IGBT 1200V 100A 420W TO-247AC 0 $0.00
NGTB15N120IHWG ON Semiconductor IGBT 15A 1200V TO-247 0 $0.00
NGTB50N60FL2WG ON Semiconductor IGBT 600V 50A TO247 0 $0.00
NGTB15N120IHTG ON Semiconductor IGBT 1200V 15A BIPOLAR TO247 0 $0.00
IRG7CH20K10EF Infineon Technologies IGBT 1200V DIE 0 $0.00
IRG7CH11K10EF Infineon Technologies IGBT 1200V DIE 0 $0.00
RJP4301APP-M0#T2 Renesas Electronics America IGBT 430V TO200FL 0 $0.00
IRG7PK35UD1MPBF Infineon Technologies IGBT 1200V ULTRA FAST TO247 0 $0.00
IRG7PH50U-EP Infineon Technologies IGBT 1200V ULTRA FAST TO247 0 $0.00