Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
IRG8P08N120KD-EPBF
|
Infineon Technologies | IGBT 1200V 15A 89W TO-247AD | 0 | $0.00 | |
IRG8P60N120KDPBF
|
Infineon Technologies | IGBT 1200V 100A 420W TO-247AC | 0 | $0.00 | |
NGTB15N120IHWG
|
ON Semiconductor | IGBT 15A 1200V TO-247 | 0 | $0.00 | |
NGTB50N60FL2WG
|
ON Semiconductor | IGBT 600V 50A TO247 | 0 | $0.00 | |
NGTB15N120IHTG
|
ON Semiconductor | IGBT 1200V 15A BIPOLAR TO247 | 0 | $0.00 | |
IRG7CH20K10EF
|
Infineon Technologies | IGBT 1200V DIE | 0 | $0.00 | |
IRG7CH11K10EF
|
Infineon Technologies | IGBT 1200V DIE | 0 | $0.00 | |
RJP4301APP-M0#T2
|
Renesas Electronics America | IGBT 430V TO200FL | 0 | $0.00 | |
IRG7PK35UD1MPBF
|
Infineon Technologies | IGBT 1200V ULTRA FAST TO247 | 0 | $0.00 | |
IRG7PH50U-EP
|
Infineon Technologies | IGBT 1200V ULTRA FAST TO247 | 0 | $0.00 |
IRG8P08N120KD-EPBF
IRG8P60N120KDPBF
NGTB15N120IHWG
IRG7CH20K10EF
RJP4301APP-M0#T2