Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Part Number | Manufacturer | Description | Quantity | Price | Option |
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Renesas Electronics America | IGBT 600V 35A 113W LDPAK | 0 | $0.00 | |
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Renesas Electronics America | IGBT 600V 25A 63W LDPAK | 0 | $0.00 | |
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Infineon Technologies | IGBT 1200V 30A 115W TO247AC | 0 | $0.00 | |
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Infineon Technologies | IGBT 600V 55A 200W TO247AC | 0 | $0.00 | |
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IXYS | IGBT 650V 290A 940W PLUS247 | 0 | $0.00 | |
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Infineon Technologies | IGBT 430V 20A 125W D2PAK | 0 | $0.00 | |
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Infineon Technologies | IGBT 1200V 90A 400W TO247AC | 0 | $0.00 | |
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ON Semiconductor | IGBT 600V 60A 250W TO247 | 0 | $0.00 | |
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ON Semiconductor | IGBT 1200V 60A 384W TO247 | 0 | $0.00 | |
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Infineon Technologies | IGBT 600V 20A 101W D2PAK | 0 | $0.00 |