Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
AUIRGC76524N0B
|
Infineon Technologies | DIODE IGBT | 0 | $0.00 | |
AIKW75N60CTE8188XKSA1
|
Infineon Technologies | IGBT 600V TO247-3 | 0 | $0.00 | |
|
RJP65T54DPM-E0#T2
|
Renesas Electronics America | IGBT TRENCH TO-3FP | 0 | $0.00 | |
|
RJH60T04DPQ-A0#T0
|
Renesas Electronics America | IGBT TH | 0 | $0.00 | |
|
IRG4RC10SDTRPBFBTMA1
|
Infineon Technologies | IGBT 600V 14A 38W DPAK | 0 | $0.00 | |
|
AUXKNG4PH50S-215
|
Infineon Technologies | IGBT 1200V TO247-3 | 0 | $0.00 | |
|
IXGM25N100A
|
IXYS | POWER MOSFET TO-3 | 0 | $0.00 | |
|
IXGM17N100A
|
IXYS | POWER MOSFET TO-3 | 0 | $0.00 | |
|
IRGS4B60KPBF
|
Infineon Technologies | IGBT 600V D2PAK-3 | 0 | $0.00 | |
|
SGTB11N60R2DT4G
|
ON Semiconductor | RC2 IGBT 10A 600V DPAK | 0 | $0.00 |