Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
IXGQ85N33PCD1
|
IXYS | IGBT 330V 85A 150W TO3P | 0 | $2.31 | |
NGTD30T120F2SWK
|
ON Semiconductor | IGBT TRENCH FIELD STOP 1200V DIE | 0 | $2.31 | |
NGTB50N60L2WG
|
ON Semiconductor | IGBT 600V 50A TO247 | 0 | $2.29 | |
STGFW30V60F
|
STMicroelectronics | IGBT 600V 60A 58W TO3PF | 0 | $2.27 | |
IXGH42N30C3
|
IXYS | IGBT 300V 223W TO247 | 0 | $2.23 | |
IXYY8N90C3
|
IXYS | IGBT 900V 20A 125W C3 TO-252 | 0 | $2.23 | |
IXYP15N65C3
|
IXYS | IGBT 650V 38A 200W TO220 | 0 | $2.23 | |
STGWA30H65DFB
|
STMicroelectronics | IGBT | 0 | $2.23 | |
IRG4IBC30KDPBF
|
Infineon Technologies | IGBT 600V 17A 45W TO220FP | 0 | $2.20 | |
AUIRG4BC30USTRL
|
Infineon Technologies | IGBT 600V 23A 100W D2PAK | 0 | $2.19 |
IXGQ85N33PCD1
NGTD30T120F2SWK
NGTB50N60L2WG
STGFW30V60F
IXGH42N30C3
IXYY8N90C3
IXYP15N65C3
STGWA30H65DFB
IRG4IBC30KDPBF
AUIRG4BC30USTRL