Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
GPA030A135MN-FDR
|
Global Power Technologies Group | IGBT 1350V 60A 329W TO3PN | 0 | $2.39 | |
MGD623N
|
Sanken | IGBT 600V 50A 150W TO3P | 0 | $2.39 | |
AOK15B60D
|
Alpha & Omega Semiconductor Inc. | IGBT 600V 30A 167W TO247 | 0 | $2.36 | |
STGWA8M120DF3
|
STMicroelectronics | IGBT | 0 | $2.35 | |
STGWF30NC60S
|
STMicroelectronics | IGBT 600V 35A 79W TO3P | 0 | $2.35 | |
FGA6530WDF
|
ON Semiconductor | IGBT 650V 60A 176W TO3PN | 0 | $2.35 | |
AOK20B65M1
|
Alpha & Omega Semiconductor Inc. | IGBT 650V 20A TO-247 | 0 | $2.34 | |
IGW03N120H2FKSA1
|
Infineon Technologies | IGBT 1200V 9.6A 62.5W TO247-3 | 0 | $2.34 | |
IXGA7N60B
|
IXYS | IGBT 600V 14A 54W TO263 | 0 | $2.34 | |
IXYP15N65C3D1
|
IXYS | IGBT 650V 38A 200W TO220 | 0 | $2.31 |
GPA030A135MN-FDR
MGD623N
AOK15B60D
STGWA8M120DF3
STGWF30NC60S
FGA6530WDF
AOK20B65M1
IGW03N120H2FKSA1
IXGA7N60B
IXYP15N65C3D1